BORAH , M N and CHALIHA , S and SARMAH , P C and RAHMAN , A (2007) Electrical properties of thermally evaporated doped and undoped films of CdSe. Indian Journal of Pure Applied Physics, 45 (8). pp. 687-691.

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Abstract

Electrical characteristics of Ag-doped and undoped films of CdSe have been reported. The activation energies at lower and elevated temperatures have been found to be 0.22 and 0.6eV, respectively. The Sn/CdSe junction exhibits Schottky barrier characteristics with diode ideality factor deviating from unity. Barrier height obtained from C-V plot and J- V plot are 0.8 and 0.72eV, respectively. The junction has been endowed with high series resistance.

Item Type:	Article
Subjects:	Physics > Electronics
Divisions:	UNSPECIFIED
Depositing User:	Dr. PK Barooah
Date Deposited:	03 Jan 2012 06:29
Last Modified:	03 Jan 2012 06:29
URI:	http://neist.csircentral.net/id/eprint/264

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