SARMAH, P C and RAHMAN , A (2001) Voltage characteristics of Ag,Al, Ni - (N)CTDE junction. Bulletin of Material Science, 24 (4). pp. 411-414.

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Schottky barriers of Ag, Al, Ni–(n)CdTe structures have been prepared and studied. The films were prepared by rf sputtering and doped with Cd metal. Diode ideality factor of these junctions are greater than unity and barrier height varies from 0×6–0×7 eV and are affected by room illumination. Photovoltaic effect of these junctions was very poor and fill factor below 0×4. Low doping concentration, high defect density, presence of an interfacial layer and presence of high series resistance are perceived to affect the J–V character

Item Type: Article
Subjects: Physics > Electronics
Depositing User: Dr. PK Barooah
Date Deposited: 11 Jan 2012 11:08
Last Modified: 11 Jan 2012 11:08

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